Parametric Analysis of Prototyped Differential Amplifier using Double-Gate MOSFET

Parametric Analysis of Prototyped Differential Amplifier using Double-Gate MOSFET
  IJETT-book-cover           
  
© 2023 by IJETT Journal
Volume-71 Issue-6
Year of Publication : 2023
Author : Thabiso Tekisi, Viranjay M. Srivastava
DOI : 10.14445/22315381/IJETT-V71I6P205

How to Cite?

Thabiso Tekisi, Viranjay M. Srivastava, "Parametric Analysis of Prototyped Differential Amplifier using Double-Gate MOSFET," International Journal of Engineering Trends and Technology, vol. 71, no. 6, pp. 33-46, 2023. Crossref, https://doi.org/10.14445/22315381/IJETT-V71I6P205

Abstract
A differential amplifier using Double-Gate (DG) MOSFET has been designed in this research work. The designed MOSFET-based differential amplifier uses BF998 MOSFET because of its capacity to reduce Short-Channel Effects (SCE) and gate current leakage. The basic information and operation of DG MOSFET and differential amplifier have been discussed. Mathematical modeling has been performed to analyze the designed differential amplifier to evaluate its performance parameters such as (i) single input – single out the gain, (ii) single input differential output voltage gain, (iii) common-mode input gain, (iv) common mode rejection ratio (CMRR),(v) frequency response, and (vi) comparative analysis. The single input – single output voltage gain, single input – differential output voltage gain, common-mode gain (differential output), common mode rejection ratio, and frequency response simulation results were obtained as -6.8 V/V, -13.1 V/V, 39 µV/V, 67.18 kV/V, and 60 MHz, respectively. This model is suitable for low-power / energy devices.

Keywords
Prototype design, Double-gate MOSFET, Differential amplifier, Low-power /energy device, Microelectronics, Nanotechnology, VLSI.

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