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Prototype Design of Double-Pole Four-Throw RF Switch Using Dual-Gate MOSFET

Prototype Design of Double-Pole Four-Throw RF Switch Using Dual-Gate MOSFET
	© 2023 by IJETT Journal
	Volume-71 Issue-2
	Year of Publication : 2023
	Author : Lebohang Tladi, Viranjay M. Srivastava
	DOI : 10.14445/22315381/IJETT-V71I2P230

How to Cite?

Lebohang Tladi, Viranjay M. Srivastava, "Prototype Design of Double-Pole Four-Throw RF Switch Using Dual-Gate MOSFET," International Journal of Engineering Trends and Technology, vol. 71, no. 2, pp. 268-280, 2023. Crossref, https://doi.org/10.14445/22315381/IJETT-V71I2P230

Abstract
This research work designs a Double-Pole Four-Throw (DP4T) switch using Dual-Gate (DG) MOSFET, which can be used in electronic and communication devices at the Micro- and Nanotechnology levels. Multiple recourses have been reviewed to identify the feasibility of the switch. Thereafter, DG MOSFET was selected due to its minimal impurity scattering, high current drive, and better control of short-channel effects compared to Diodes, BJTs, and other traditional MOSFETs. The switch has been compared to an alternative switch topology. Reasons based on the research have been stated to legitimize the switch's effectiveness over SPST, SPDT, DPDT, etc. configurations. This device has been fabricated and tested for various parameters such as differential mode gain, common mode gain, and frequency response. The testing process resulted in differential mode gain (3.58 dB and 3.70 dB), common mode gain (2.72 dB and 2.73 dB), and isolation gain (70 dB and 60 dB) for 50 MHz and 100 MHz, respectively. The focus of the work is the design of the switch based on mathematical analysis and approximations.

Keywords
Dual-gate MOSFET, Efficiency, Switch, Microelectronics, Nanotechnology, VLSI.

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