A Numerical Modeling Approach to Study the Characteristics of a Photovoltaic Cell Featuring a GaAs Absorber Layer

A Numerical Modeling Approach to Study the Characteristics of a Photovoltaic Cell Featuring a GaAs Absorber Layer
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© 2024 by IJETT Journal
Volume-72 Issue-1
Year of Publication : 2024
Author : Jhilirani Nayak, Priyabrata Pattanaik, Dilip Kumar Mishra
DOI : 10.14445/22315381/IJETT-V72I1P116

How to Cite?

Jhilirani Nayak, Priyabrata Pattanaik, Dilip Kumar Mishra, "A Numerical Modeling Approach to Study the Characteristics of a Photovoltaic Cell Featuring a GaAs Absorber Layer," International Journal of Engineering Trends and Technology, vol. 72, no. 1, pp. 164-173, 2023. Crossref, https://doi.org/10.14445/22315381/IJETT-V72I1P116

Abstract
This article provides an innovative way of constructing a Si/GaAs solar cell and investigating its electrical parameters and the electrical properties of the materials integrated into the cell. The device architecture incorporates a gallium arsenide (GaAs) emitter on the top of a silicon wafer, coated with a dual coating of zinc oxide (ZnO) and silicon dioxide (SiO2) on its surface. To enhance the overall performance of the photovoltaic device, a detailed investigation of critical parameters, including material thickness, bandgap characteristics, band alignment, and emitter carrier concentration, was conducted. The model's validity was evaluated through the performance metrics (efficiency), fill factor, and spectral response, all executed with the assistance of the COMSOL Multiphysics tool. The device exhibits a power conversion efficiency of 14.46%, a device short-circuit current of 16.401mA, and a fill factor of 0.8728. This study projects the distinctive characteristics of the device with and without the incorporation of anti-reflection coatings and its overall performance.

Keywords
Anti-reflection coatings, COMSOL Multiphysics, Zinc Oxide, Si/GaAs solar cell, Silicon dioxide.

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