Design and Modelling of Analysis of Kerwin, Huelsman, and Newcomb (KHN) Biquad Filter using Double-Gate MOSFET for Low Energy Devices
Design and Modelling of Analysis of Kerwin, Huelsman, and Newcomb (KHN) Biquad Filter using Double-Gate MOSFET for Low Energy Devices |
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| © 2023 by IJETT Journal | ||
| Volume-71 Issue-6 |
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| Year of Publication : 2023 | ||
| Author : Zethembe S. Madonsela, Viranjay M. Srivastava |
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| DOI : 10.14445/22315381/IJETT-V71I6P220 | ||
How to Cite?
Zethembe S. Madonsela, Viranjay M. Srivastava, "Design and Modelling of Analysis of Kerwin, Huelsman, and Newcomb (KHN) Biquad Filter using Double-Gate MOSFET for Low Energy Devices," International Journal of Engineering Trends and Technology, vol. 71, no. 6, pp. 181-195, 2023. Crossref, https://doi.org/10.14445/22315381/IJETT-V71I6P220
Abstract
This work designs a Kerwin, Huelsman, and Newcomb (KHN) biquad filter using Double-Gate (DG) MOSFETs. The differential amplifier topology has been used to realize and analyze this device to conserve energy. The KHN Biquad filter prototype has been fabricated and verified. Various parameters such as the center frequency, DC gain, bandwidth, power dissipation, and quality issue have been discussed. The sub-sections of this device, such as the high-pass stage filter, pass frequencies above 10 kHz; the band-pass stage filter works well for frequencies range 4 kHz - 45 kHz, and the low-pass filter allows frequencies less than 10 kHz. This device provides a Universal Biquadratic filter that dissipates less power than the original KHN biquad filter.
Keywords
Double-gate MOSFET, KHN Filter, Differential amplifier, Low energy device, Microelectronics, VLSI.
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